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november 2013 FQD5N15 n-channel qfet ? mosfet 150 v, 4.3 a, 800 m description FQD5N15 n-channel qfet ? mosfet ?2000 fairchild semiconductor corporation FQD5N15 rev. c0 www.fairchildsemi.com 1 this n-channel enhancement mode power mosfet is produced using fairchild semiconductors proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, audio amplifier, dc motor control, and variable switching power applications. features absolute maximum ratings t c = 25 o c unless otherwise noted. thermal characteristics symbol parameter FQD5N15tm unit r ? jc thermal resistance, junction to case, max. 4.17 o c/w r ? ja thermal resistance, j unction to ambi ent ( m inimum p ad of 2 - oz c opper), max. 110 thermal resistance, junction to ambient (*1 in 2 pad of 2-oz copper), max. 50 ? 4.3 a, 150 v, r ds(on) = 800 m? (max.) @ v gs = 10 v, i d = 2.15 a ? low gate charge (typ. 5.4 nc) ? low crss (typ. 7.5 pf) ? 100% avalanche tested d-pak g s d g s d

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package marking and ordering information part number top mark package reel size tape width quantity FQD5N15 FQD5N15tm d-pak 330 mm 16 mm 2500 units FQD5N15 n-channel qfet ? mosfet ?2000 fairchild semiconductor corporation FQD5N15 rev. c0 www.fairchildsemi.com 2 1. repetitive r ating: p ulse-width limited by m aximum junction temperature. 2. l = 4.96 mh, i as = 4.3 a, v dd = 25 v, r g = 25 ?, starting t j = 25 o c . 3. i sd 5.4 a, di/dt 300 a/s, v dd bv dss , starting t j = 25 o c . 4. essentially independent of operating temperature. packing method tape and reel electrical characteristics t c = 25 o c unless otherwise noted. , .)7+,6 .*.& ( , .)+,

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figure 12. gate charge test circuit & waveform f igure 13 . resistive switc hing test circuit & waveforms figure 14 . unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p v gs v gs i g = const. ?2000 fairchild semiconductor corporation FQD5N15 rev. c0 www.fairchildsemi.com 5 FQD5N15 n-channel qfet ? mosfet
f igure 15. pe ak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- FQD5N15 n-channel qfet ? mosfet ?2000 fairchild semiconductor corporation FQD5N15 rev. c0 www.fairchildsemi.com 6
?2000 fairchild semiconductor corporation FQD5N15 rev. c0 www.fairchildsemi.com 7 FQD5N15 n-channel qfet ? mosfet mechanical dimensions figure 16. to252 (d-pak), molded, 3-lead, option aa&ab package drawings are provided as a service to customers considering fairchild com ponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt252-003
?2000 fairchild semiconductor corporation FQD5N15 rev. c0 www.fairchildsemi.com 8 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchilds worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm greenbridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver ? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost ? tinybuck ? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic? trifault detect? truecurrent ? * ? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporations anti-counterfeiting policy. fairchilds anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourage s customers to purchase fairchild parts either directly from fairchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair childs quality standards for handing and storage and provide access to fairchilds full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. rev. i66 tm ? FQD5N15 n-channel qfet ? mosfet

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